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BUV22 SWITCHMODEt Series NPN Silicon Power Transistor
This device is designed for high speed, high current, high power applications.
Features http://onsemi.com
* High DC Current Gain: * Low VCE(sat), VCE(sat)
hFE min = 20 at IC = 10 A max = 1.0 V at IC = 10 A TF max = 0.35 ms at IC = 20 A
40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS - 250 WATTS
* Very Fast Switching Times:
* Pb-Free Package is Available*
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
Symbol VCEO(SUS) VCBO VEBO VCEX VCER IC ICM IB PD TJ, Tstg
Value 250 300 7 300 290 40 50 8 250 -65 to 200
Unit Vdc Vdc Vdc Vdc Vdc Adc Apk Adc W _C BUV22G AYWW MEX TO-204AE (TO-3) CASE 197A
Collector-Emitter Voltage (VBE = -1.5 V) Collector-Emitter Voltage (RBE = 100 W) Collector-Current - Continuous - Peak (PW v 10 ms) Base-Current Continuous Total Device Dissipation @ TC = 25_C Operating and Storage Junction Temperature Range
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Symbol qJC Max 0.7 Unit _C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
BUV22 G A Y WW MEX
= Device Code = Pb-Free Package = Assembly Location = Year = Work Week = Country of Origin
ORDERING INFORMATION
Device BUV22 BUV22G *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2006
Package TO-204 TO-204 (Pb-Free)
Shipping 100 Units / Tray 100 Units / Tray
1
February, 2006 - Rev. 10
Publication Order Number: BUV22/D
II IIIIIIIII IIIIII I I I IIIIIIIIIII IIII I I I I I IIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIII I III I III IIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I III I I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIII II I I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I III I I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. SWITCHING CHARACTERISTICS (Resistive Load) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (Note 1) SECOND BREAKDOWN OFF CHARACTERISTICS (Note 1)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Fall Time
Storage Time
Turn-on Time
Current Gain -- Bandwidth Product (VCE = 15 V, IC = 2 A, f = 4 MHz)
Base-Emitter Saturation Voltage (IC = 40 A, IB = 4 A)
Collector-Emitter Saturation Voltage (IC = 10 A, IB = 1 A) (IC = 20 A, IB = 2.5 A)
DC Current Gain (IC = 10 A, VCE = 4 V) (IC = 20 A, VCE = 4 V)
Second Breakdown Collector Current with base forward biased (VCE = 20 V, t = 1 s) (VCE = 140 V, t = 1 s)
Emitter-Cutoff Current (VEB = 5 V)
Emitter-Base Reverse Voltage (IE = 50 mA)
Collector-Emitter Cutoff Current (VCE = 200 V)
Collector Cutoff Current at Reverse Bias (VCE = 300 V, VBE = -1.5 V) (VCE = 300 V, VBE = -1.5 V, TC = 125_C)
Collector-Emitter Sustaining Voltage (IC = 200 mA, IB = 0, L = 25 mH)
Characteristic
1.0
0.2
DERATING FACTOR
0.4
0.6
0.8
0
(IC = 20 A, IB1 = IB2 = 2.5 A, VCC = 100 V, RC = 5 W)
40
Figure 1. Power Derating
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TC, TEMPERATURE (C) 80
BUV22
2 120 160 VCEO(sus) Symbol VCE(sat) VBE(sat) VEBO ICEO IEBO ICEX hFE IS/b ton fT ts tf 200 12 0.15 Min 250 8.0 20 10 7 3.0 12.0 0.35 Max 2.0 0.8 1.5 1.0 1.5 1.0 3.0 60 mAdc mAdc mAdc MHz Unit Vdc Vdc Adc Vdc ms V
BUV22
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown limitations do not derate the same as thermal limitations. At high case temperatures, thermal limitations will reduce the power that can handled to values less than the limitations imposed by second breakdown.
1 10 100 250 VCE, COLLECTOR-EMITTER VOLTAGE (V)
40 IC, COLLECTOR CURRENT (A) 10
1
0.1
Figure 2. Active Region Safe Operating Area
2.0 IC/IB = 8 1.6 V, VOLTAGE (V) 1.2 0.8 0.4 0 VBE
50 45 40 35 30 25 20 15 10 5 VCE = 5 V
VCE
1
10
IC, COLLECTOR CURRENT (A)
0 0.1
1
10
100
IC, COLLECTOR CURRENT (A)
Figure 3. "On" Voltages
Figure 4. DC Current Gain
t, TIME ( s)
3.0 2.0 1.0 0.4 0.3 0.2 4 8 12 16 tS RC IB2 IB1 RB
VCC 104 mF
ton tF 20 24
VCC = RC = RB = IB1 = IC/IB =
100 V 5W 2.7 W IB2 8
RC - RB: Non inductive resistances
IC, COLLECTOR CURRENT (A)
Figure 5. Resistive Switching Performance
Figure 6. Switching Times Test Circuit
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3
BUV22
PACKAGE DIMENSIONS
TO-204 (TO-3) CASE 197A-05 ISSUE K
A N C -T- E D
2 PL SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77
K
M
0.30 (0.012)
TQ
M
Y
M
U V
2
L G
-Y-
H
B
DIM A B C D E G H K L N Q U V
1
-Q- 0.25 (0.010)
M
TY
M
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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4
BUV22/D

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